| PART |
Description |
Maker |
| FSCQ1565RTYDTU |
15A/650V QRC Power Switch
|
Fairchild Semiconductor
|
| 15N65L-TF2-T 15N65L-T47-T 15N65G-T47-T |
15A, 650V N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| KA5M0165 KA5L0165R KA5L0165RN KA5L0165RTU KA5L0165 |
Fairchild Power Switch(FPS)
1A/650V 50KHz Power Switch
1A/650V 70KHz Power Switch
1A/650V 100KHz Power Switch
IC,SMPS CONTROLLER,CURRENT-MODE,BIPOLAR/MOS,DIP,8PIN,PLASTIC
Fairchild Power Switch(FPS) 4 A SWITCHING REGULATOR, 67 kHz SWITCHING FREQ-MAX, PDIP8
Fairchild Power Switch(FPS) 4 A SWITCHING REGULATOR, PSFM4
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
Fairchild Semiconductor, Corp.
|
| KIA78L05BPV KIA78L06BPV KIA78L08BPV KIA78L09BPV KI |
6V/0.15A Regulator
9V/0.15A Regulator
10V/0.15A Regulator
12V/0.15A Regulator
15V/0.15A Regulator
18V/0.15A Regulator
20V/0.15A Regulator
24V/0.15A Regulator
0.15A 3-Terminal Voltage Regulator
|
Korea Electronics (KEC)
|
| RGT30NL65D |
650V 15A Field Stop Trench IGBT
|
Rohm
|
| ICE2B0565 ICE2A0565 ICE2A0565Z ICE2A180Z ICE2A265 |
Integrated Power ICs - max Pout=13W, fop=67kHz, Vbreak=650V, DIP8
Integrated Power ICs - max. Pout=12W, Vbreak=650V, fop=100kHz, DIP7
Integrated Power ICs - max. Pout=17W, fop=100kHz, Vbreak=800V, DIP7
Integrated Power ICs - max. Pout=32W, fop=100kHz, Vbreak=650V, DIP8
Integrated Power ICs - max. Pout=31W, fop=100kHz, Vbreak=800V, DIP7
Integrated Power ICs - max. Pout=130W, fop=100kHz, Vbreak=650V, TO220
Integrated Power ICs - max. Pout=18W, fop=67kHz, Vbreak=650V, DIP8
Integrated Power ICs - max. Pout=32W, fop=67kHz, Vbreak=650V, DIP8
Integrated Power ICs - max. Pout=45W, fop=67kHz, Vbreak=650V, DIP8
Integrated Power ICs - max. Pout=130W, fop=67kHz, Vbreak=650V, TO220
|
Infineon
|
| 2N4401 |
NPN Transistor Plastic-Encapsulate Transi stors
|
SeCoS Halbleitertechnologie GmbH
|
| STP5NK65Z STP5NK65ZFP |
N-CHANNEL 650V 1.5 OHM 5A TO-220 ZENER-PROTECTED SUPERMESH POWER MOSFET
N-CHANNEL 650V 1.5 OHM 5A TO-220 ZENER-PROTECTED SUPERMESH POWER MOSFET
JFET; Breakdown Voltage, V(br)gss:-25V; Zero Gate Voltage Drain Current Min, Idss:100mA; Gate-Source Cutoff Voltage Max, Vgs(off):-9V; Continuous Drain Current, Id:100mA; Current Rating:100mA; Gate-Source Breakdown Voltage:-25V RoHS Compliant: No
N-CHANNEL 650V - 1.5ohm - 5A TO-220 Zener-Protected SuperMESHPower MOSFET
N-CHANNEL 650V - 1.5ohm - 5A TO-220 Zener-Protected SuperMESH⑩Power MOSFET
N-CHANNEL 650V - 1.5ohm - 5A TO-220 Zener-Protected SuperMESH?Power MOSFET
|
ST Microelectronics
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| 6110.3300 |
IEC AC Power Inlet; Voltage Rating: 250V; Current Rating: 15A; Mounting Type: Panel; Terminal Type: Tabs 10/15A, 250VAC, MALE, MAINS POWER CONNECTOR, SOLDER, SOCKET
|
SCHURTER AG
|
| 6130.5615 6130.5630 6130.5620 |
IEC AC Power Inlet; Voltage Rating: 250V; Current Rating: 15A; Mounting Type: Panel; Terminal Type: Tabs PCB 10/15A, 250VAC, MALE, MAINS POWER CONNECTOR, SOLDER, SOCKET
|
SCHURTER AG
SCHURTER INC
|
| 10-FY074PA050SM-M582F38 |
650V IGBT H5 and 650V Stealth Si diode
|
Vincotech
|
| 2SB1713 2SB1714 2SB852K1 2SC2412K1 2SC41021 2SC472 |
-3A / -12V Bipolar transistor
-2A / -30V Bipolar transistor
High-gain Amplifier Transistor (?32V, ?0.3A)
General purpose transistor (50V, 0.15A)
High-voltage Amplifier Transistor (120V, 50mA)
High-Frequency Amplifier Transistor (11V, 50mA, 3.2GHz)
Power transistor (60V, 3A)
Medium power transistor (60V, 2A)
Medium power transistor (60V, 0.5A)
High-gain Amplifier Transistor (32V , 0.3A)
Medium Power Transistor (32V, 1A)
Power Transistor (80V, 1A)
Low VCE(sat) transistor (strobe flash)
High-current Gain Medium Power Transistor (20V, 0.5A)
Low frequency amplifier
4V Drive Nch MOS FET
10V Drive Nch MOS FET
2.5V Drive Nch MOS FET
4 Amps, 600 Volts N-CHANNEL POWER MOSFET
|
UTC
ROHM[Rohm]
|
|
